发明名称 RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method excellent in resolution and sensitivity, and a photosensitive resin composition suitable for the pattern forming method. <P>SOLUTION: The resist pattern forming method is characterized in that an alkali developable photosensitive resin composition containing a hydrophilic polymer (A) having an active hydrogen atom-containing group, a polyfunctional acrylate monomer (B), a photo-radical polymerization initiator (C), a photoacid generator (D) and a crosslinking agent (E) is applied and dried on a substrate, selectively exposed, heated at 50-200&deg;C and developed with an alkali developer. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007140274(A) 申请公布日期 2007.06.07
申请号 JP20050335901 申请日期 2005.11.21
申请人 SANYO CHEM IND LTD 发明人 YAMAMOTO YUSUKE;YUAN GUO-LI
分类号 G03F7/038;C08F290/00;G03F7/027;G03F7/38 主分类号 G03F7/038
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