发明名称 |
Method to form thick relaxed SiGe layer with trench structure |
摘要 |
A method of forming a SiGe layer having a relatively high germanium content and a relatively low threading dislocation density includes preparing a silicon substrate; depositing a layer of SiGe to a thickness of between about 100 nm to 500 nm, wherein the germanium content of the SiGe layer is greater than 20%, by atomic ratio; implanting H+ ions into the SiGe layer at a dose of between about 1.10<SUP>16 </SUP>cm<SUP>-2 </SUP>to 5.10<SUP>16 </SUP>cm<SUP>-2</SUP>, at an energy of between about 20 keV to 45 keV; patterning the SiGe layer with photoresist; plasma etching the structure to form trenches about regions; removing the photoresist; and thermal annealing the substrate and SiGe layer, to relax the SiGe layer, in an inert atmosphere at a temperature of between about 650° C. to 950° C. for between about 30 seconds and 30 minutes.
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申请公布号 |
US7226504(B2) |
申请公布日期 |
2007.06.05 |
申请号 |
US20020062336 |
申请日期 |
2002.01.31 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;TWEET DOUGLAS JAMES;LI TINGKAI;LEE JONG-JAN;HSU SHENG TENG |
分类号 |
C30B33/02;H01L21/76;H01L21/20;H01L21/265;H01L21/324;H01L29/161 |
主分类号 |
C30B33/02 |
代理机构 |
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主权项 |
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地址 |
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