| 摘要 |
A method for degassing a via hole in a semiconductor device is provided to improve burial characteristics in a burial process for burying the via hole with a metal layer by forming a surface of a lower metal layer pattern having a changed level of surface energy. An outgassing process is performed to outgas foreign materials from a via hole by maintaining a state of high temperature in a semiconductor device. A level of surface energy is increased on a lower metal layer pattern(110) and an exposed surface of an inter-metal dielectric layer(120) by using laser beams. An absorption layer(170) is formed on the lower metal layer pattern and the exposed surface of the inter-metal dielectric layer.
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