METHOD FOR MANUFACTURING A SILICON-ON-INSULATOR (SOI) WAFER WITH AN ETCH STOP LAYER,申请号KR20077007248-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING A SILICON-ON-INSULATOR (SOI) WAFER WITH AN ETCH STOP LAYER
摘要
申请公布号	KR20070055576(A)	申请公布日期	2007.05.30
申请号	KR20077007248	申请日期	2005.11.09
申请人	INTEL CORPORATION	发明人	TOLCHINSKY PETER;GILES MARTIN;MCSWINEY MICHAEL;SHAHEEN MOHAMAD;YABLOK IRWIN
分类号	H01L21/20;H01L27/12	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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