发明名称
摘要 PROBLEM TO BE SOLVED: To realize conductive connection between a silicon substrate and a solder ball without through a bonding process, when manufacturing a semiconductor device called BGA for example. SOLUTION: Onto a bonding layer 22 on a base plate 21 of a size dealing with a plurality of semiconductor devices, semiconductor elements 23 formed by providing a rewiring 32, a columnar electrode 33 and a sealing film 34 on a silicon substrate 24 are bonded with spaces from one another. Then a sealing film 35 is formed on a peripheral side surface of the semiconductor element. Then a first upper insulation film 36, a first upper rewiring 39, a second upper insulation film 41, a second upper rewiring 44 and a third upper insulation film 45 are laminated in this order. At the last, a solder ball 47 is formed. COPYRIGHT: (C)2004,JPO
申请公布号 JP3918681(B2) 申请公布日期 2007.05.23
申请号 JP20020232289 申请日期 2002.08.09
申请人 发明人
分类号 H01L23/12;H01L25/04;H01L25/18 主分类号 H01L23/12
代理机构 代理人
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地址
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