发明名称 Underfill material to reduce ball limiting metallurgy delamination and cracking potential in semiconductor devices
摘要 An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 mum and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/° C., and its glass transition temperature is at least 100° C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.
申请公布号 US7218007(B2) 申请公布日期 2007.05.15
申请号 US20040950691 申请日期 2004.09.28
申请人 INTEL CORPORATION 发明人 SHI SONG-HUA;CHEN TIAN-AN;ZHANG JASON;CERTEZA KATRINA
分类号 H01L23/52;H01L23/48;H01L29/40 主分类号 H01L23/52
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