| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of evaluating differences between an etching rate of a dense pattern and etching rates of other parts in a dry etching. SOLUTION: The semiconductor device is equipped with a first TEG pattern 4c which is formed on an insulating film 2, and has a first plurality of conductive patterns mutually spaced and arranged almost in parallel and electrically separated each other; a second TEG pattern 4e which is formed on the insulating film 2, has a second plurality of conductive patterns mutually spaced and arranged almost in parallel, and has third conductive patterns mutually connecting the second plurality of conductive patterns; a first checking gate electrode 4a which is connected with any of the first plurality of conductive patterns; a second checking gate electrode 4b which is connected with the second TEG pattern 4e; a first checking gate insulating film 3a which is located under the first checking gate electrode 4a; and a second checking gate insulating film 3b which is located under the second checking gate electrode 4b. COPYRIGHT: (C)2007,JPO&INPIT
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