发明名称 |
Laterally-integrated waveguide photodetector apparatus and related coupling methods |
摘要 |
High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
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申请公布号 |
US2007104441(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20050269907 |
申请日期 |
2005.11.08 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
AHN DONGHWAN;LIU JIFENG;MICHEL JURGEN;KIMERLING LIONEL C. |
分类号 |
G02B6/10;G02B6/26;G02B6/42 |
主分类号 |
G02B6/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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