发明名称 |
Semiconductor photodetector device |
摘要 |
A semiconductor photodetector device includes: a first semiconductor layer of a first conductivity type; and a second semiconductor layer of a second conductivity type formed on the first semiconductor layer and having a light-receiving region. The first semiconductor layer includes a first region containing an impurity of the first conductivity type at a high concentration and a second region formed on the first region and containing an impurity of the first conductivity type at a concentration lower than that of the first region. The second semiconductor layer includes a third region containing an impurity of the second conductivity type at a concentration higher than that of the second region and a fourth region formed on the third region and containing an impurity of the second conductivity type at a concentration higher than that of the third region.
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申请公布号 |
US7211829(B2) |
申请公布日期 |
2007.05.01 |
申请号 |
US20050059500 |
申请日期 |
2005.02.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD |
发明人 |
YASUKAWA HISATADA;ITO RYOUICHI;IWAI TAKAKI;TANIGUCHI MASAKI;JIN YASUSHI |
分类号 |
H01L27/15;H01L27/144;H01L31/0288;H01L31/103;H01L31/113 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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