SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a molding layer on a semiconductor substrate; forming a first electrode passing through the molding layer; partially etching the molding layer to expose a part of the first electrode; forming a sacrificial oxide layer by naturally oxidizing the exposed part of the first electrode; removing the partially-etched molding layer and the sacrificial oxide layer; forming a dielectric layer on the substrate of which the molding layer and the sacrificial oxide layer are removed; and forming a second electrode on the dielectric layer.