| 摘要 |
PROBLEM TO BE SOLVED: To improve degradation resistance of capacitors locating near the periphery in a memory cell region. SOLUTION: In a semiconductor device, a first insulating film 9 formed over a semiconductor substrate 1; a plurality of actually-operating capacitors Q<SB>1</SB>formed in a memory cell region on the first insulating film 9, and each having a first upper electrode 74a, a first dielectric film 73, and a first lower electrode 72a; second actually-operating capacitors Q<SB>2</SB>formed in four corners in the memory cell region on the first insulating film 9, and each having a second upper electrode 74b whose area is larger than that of the first upper electrode 74a, a second dielectric film 73, and a second lower electrode 72b; a second insulating film 13 for covering the first actually-operating capacitors Q<SB>1</SB>and the second actually-operating capacitors Q<SB>2</SB>, are included. COPYRIGHT: (C)2007,JPO&INPIT
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