METHOD OF FORMING A NANOCLUSTER CHARGE STORAGE DEVICE

摘要

A plurality of memory cell devices is formed by using an intermediate dual polysilicon-nitride control electrode stack overlying nanoclusters (24). The stack includes a first-formed polysilicon-nitride layer (126) and a second-formed polysilicon-containing layer (28). The second-formed polysilicon-containing layer is removed from areas containing the plurality of memory cells. In one form the second-formed polysilicon-containing layer also contains a nitride portion which is also removed, thereby leaving the first-formed polysilicon-nitride layer for the memory cell devices. In another form the second-formed ploysilicon-containing layer does not contain nitride and a nitride portion of the first-formed polysilicon-nitride layer is also removed. In the latter form a subsequent nitride layer is formed over the remaining polysilicon layer (28). A top portion of the device is protected from oxidation. Gate electrodes of devices peripheral to the memory cell devices also use the second-formed polysilicon-containing layer.