| 摘要 |
The invention relates to a method for producing a PCM memory element and to a corresponding PCM element. The method of production comprises the following steps: providing a first and a second line device (Ma, Mb) underneath an insulating layer ( 10 ); providing a hole ( 5 a, 5 b) in the insulation layer ( 10 ), which partially exposes the first and the second line device (Ma, Mb); providing, as the respective lower electrode, a respective strip-shaped resistor element ( 20; 20'; 20'' ) on the wall of the hole (5a, 5b), which electrically contacts the exposed first or second line device (Ma, Mb): providing a filling ( 30 ) from an insulating material in the hole ( 5 a, 5 b) between the strip-shaped resistor elements ( 20; 20'; 20'' ); providing a layer ( 35 ) produced from a PCM material in the hole ( 5 a, 5 b), which electrically contacts the strip-shaped resistor elements ( 20; 20'; 20'' ) on their upper faces; providing a conducting layer ( 40 ) above the hole ( 5 a, 5 b) and the surrounding surface of the insulating layer ( 10 ): forming a sublithographic masking strip ( 50 ) on the conducting layer ( 40 ) above the hole ( 5 a, 5 b) and the surrounding surface of the insulating layer ( 210 ) at an angle to the direction of the first and second line device (Ma, Mb): forming segments of the mask strip ( 50 ); structuring the conducting layer ( 40 ) and the layer ( 35 ) produced from the PCM material while using the segments for forming the respective upper electrode from the conducting layer ( 40 ) and a PCM area of the layer ( 35 ) produced from PCM material lying between the upper and the lower electrode: removing the mask strip ( 50 ); and electrically connecting the upper electrode to an additional line device ( 80 ).
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