TRANSISTOR AND DISPLAY DEVICE USING THE SAME, ELECTRONIC EQUIPMENT, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a transistor having a low contact resistance.

SOLUTION: This transistor comprises: a semiconductor film containing impurity elements imparting P-type or N-type; an insulating film disposed thereon; and an electrode or a wiring electrically connected to the semiconductor film through at least a contact hole formed in the insulating film, wherein in the semiconductor film, the concentration of the impurity elements contained in a deeper region than a predetermined depth is in a first range (1×1020/cm3or less) and the concentration of the impurity elements contained in a shallower region than a predetermined depth is in a second range (more than 1×1020/cm3); and in a deeper region than a portion of the semiconductor film which is contacted with the electrode or the wiring, the concentration of the impurity elements is in a first range.

COPYRIGHT: (C)2007,JPO&INPIT