发明名称 PVD TARGET WITH END OF SERVICE LIFE DETECTION CAPABILITY
摘要 A PVD target structure for use in physical vapor deposition. The PVD target structure includes a consumable slab of source material and one or more detectors for indicating when the slab of source material is approaching or has been reduced to a given quantity representing a service lifetime endpoint of the target structure.
申请公布号 US2007068803(A1) 申请公布日期 2007.03.29
申请号 US20060427602 申请日期 2006.06.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HSIAO YI-LI;HWANG JERRY;SHEU JYH-CHERNG;SHEU LAWRANCE;WANG JEAN;YU CHEN-HUA
分类号 C23C14/00 主分类号 C23C14/00
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