| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus capable of adequately maintaining the temperature of a work during the film deposition, and shortening the time from the carry-in of the work to the start of the film deposition. SOLUTION: When a substrate 10 is not conveyed into a process chamber 2, the heater temperature T1 to be detected by a temperature sensor 12 is fed back to perform the heater control so that the temperature of a heater plate 11 reaches a predetermined temperature, and the process chamber 2 is heated in advance. As a result, the time from the carry-in of the substrate to the start of the film deposition can be shortened. On the other hand, when the substrate 10 is conveyed into the process chamber 2, a cylinder 8 is driven to bring a temperature sensor 9 into contact with the substrate 10. During the film deposition, the substrate temperature T2 to be detected by the temperature sensor 9 is fed back to perform the heater control, and the temperature of the substrate 10 is maintained at the optimum film deposition temperature. COPYRIGHT: (C)2007,JPO&INPIT
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