NONVOLATILE MEMORY DEVICE AND FORMING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which provides a highly integrated memory device, and also to provide a forming method thereof. SOLUTION: A flash EEPROM array includes a first row of EEPROM cells having a first floating gate electrode 40, and a second row of EEPROM cells having a second floating gate electrode 40. The first floating gate electrode 40 includes a horizontal segment 40h and a vertical segment 40v which collectively define an L-shaped cross section of the first floating gate electrode 40 in a first direction. The second floating gate electrode 40 includes a horizontal segment 40h and a vertical segment 40v which collectively define the L-shaped cross section of the second floating gate electrode 40 in a second direction opposite to the first direction. COPYRIGHT: (C)2007,JPO&INPIT