| 发明名称 |
POLYSILICON ETCHING METHODS |
| 摘要 |
Polysilicon etching methods are disclosed that employ a gas flow including perfluorocyclopentene (C<SUB>5</SUB>F<SUB>8</SUB>) and nitrogen trifluoride (NF<SUB>3</SUB>). The etching methods achieved a substantially vertical profile and smoother surfaces, and may achieve a 3sigma variation as low as 3.0 nm.
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| 申请公布号 |
US2007056930(A1) |
申请公布日期 |
2007.03.15 |
| 申请号 |
US20050162550 |
申请日期 |
2005.09.14 |
| 申请人 |
SONY ELECTRONICS INC. |
发明人 |
ISEDA SEIJI;PANDA SIDDHARTHA;SIEVERS MICHAEL R.;WISE RICHARD S. |
| 分类号 |
C03C25/68;B44C1/22;C23F1/00;H01L21/461 |
主分类号 |
C03C25/68 |
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