LIGHT EMITTING DIODE OF VERTICAL ELECTRODE TYPE AND FABRICATING METHOD THEREOF

摘要

A vertical type light emitting diode and its manufacturing method are provided to promote a flow of a current and to lower an operation voltage by using a vertical type electrode structure. An ohmic layer(110) is formed on a conductive supporting layer(100). A super lattice layer(120) is formed on the ohmic layer. A p-type nitride semiconductor layer(130) is formed on the super lattice layer. An electron blocking layer(140) is formed on the p-type nitride semiconductor layer. An active layer(150) is formed on the electron blocking layer. A current diffusion layer(160) is formed on the active layer to spread an implanted electron to a horizontal direction of the active layer. An n-type nitride semiconductor layer(170) is formed on the current diffusion layer. An n-electrode(180) is formed on the n-type nitride semiconductor layer.