| 摘要 |
A semiconductor device including: a bulk semiconductor substrate; an access transistor; a thyristor formed on the bulk semiconductor substrate connecting to the access transistor; an element separating region to separate the region for the access transistor and the region for the thyristor from each other; and a wiring layer connecting one of the diffused layers of the access transistor and the cathode of the thyristor together through a connecting hole, the impurity region at the anode side of the thyristor being composed of a p-type impurity region, an n-type impurity region, p-type impurity region, and an n-type impurity region, which are formed sequentially in the depthwise direction, with the lowermost n-type impurity region receiving the same voltage as that applied to the anode at the time of data holding.
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