FILM-FORMING MATERIAL AND METHOD OF FORMING PATTERN

摘要

A film-forming material which at a low temperature can form a film having high etching resistance and attaining a high etching selectivity ratio in organic-film etching; and a method of forming a pattern with the film-forming material. The film-forming material comprises a solvent (S) and, dissolved therein, a metal compound (W) which upon hydrolysis can generate a hydroxy group, the solvent (S) comprising a solvent (S1) which has no functional groups reacting with the metal compound (W) and has a boiling point of 155°C or higher. The method of pattern formation includes coating a pattern formed on the organic film of a layered product comprising a base and an organic film with the film-forming material and etching the organic film using this pattern as a mask.