| 摘要 |
PROBLEM TO BE SOLVED: To provide a forming method of a semiconductor bulk crystal which has a large crystal size, and in which contamination by impurities from the crucible is reduced and effect of stress and strain from the wall of the crucible is reduced. SOLUTION: The semiconductor bulk crystal is formed by providing a melt of a semiconductor selected from Si, Ge and SiGe, keeping the melt at a temperature near its melting point in a crucible, thereafter forming a nucleus by immersing a seed crystal into the melt or by blowing a cooling gas onto the near center of the melt surface or by dipping either one of rods of quartz, carbon, silicon carbide, silicon nitride or a metal into the melt, and starting the solidification and the growth of the crystal therefrom. COPYRIGHT: (C)2007,JPO&INPIT
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