发明名称 |
Differental current source for generating DRAM refresh signal |
摘要 |
A circuit for generating a refresh signal for a memory cell of a semiconductor memory includes a capacitor and a differential current source for providing a charging current to the capacitor. The differential current source includes a temperature-dependent and a temperature-independent current source connected such that the charging current is proportional to a difference between a temperature-dependent current and a temperature-independent current. A comparator a voltage at a capacitor terminal and a reference voltage. The comparator generates a refresh signal when capacitor voltage exceeds the reference voltage.
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申请公布号 |
US7180805(B2) |
申请公布日期 |
2007.02.20 |
申请号 |
US20030386147 |
申请日期 |
2003.03.11 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
SCHNABEL JOACHIM;SCHAEFER ANDRE |
分类号 |
G11C7/00;G11C7/04;G11C11/406;H03K3/0231 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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