| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high light intensity light emitting diode which greatly improves the take-out efficiency of light by efficiently roughing the surface of a light emitting diode chip having a GaAs<SB>x</SB>P<SB>1-x</SB>(0≤x≤1) layer and a light emitting layer containing a pn junction inside on a GaAs<SB>x</SB>P<SB>1-x</SB>(0≤x≤1) substrate with a specified etching mixed solution. <P>SOLUTION: The surface of a light emitting diode chip having at least a GaAs<SB>x</SB>P<SB>1-x</SB>(0≤x≤1) layer and a light emitting layer containing a pn junction inside on a GaAs<SB>x</SB>P<SB>1-x</SB>(0≤x≤1) substrate is roughed by chemical etching with a mixed solution containing iodine acid, hydrofluoric acid, and sulfuric acid. <P>COPYRIGHT: (C)2007,JPO&INPIT |
