| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of reducing biasing of carrier distribution. SOLUTION: The semiconductor light emitting element comprises an n-type cladding layer 14, a p-type cladding layer 16, and an active layer 12. The active layer 12 is an active layer 12 of a multi-quantum well structure including a plurality of well layers 34<SB>1</SB>to 34<SB>M</SB>and a plurality of barrier layers 32<SB>1</SB>to 32<SB>N</SB>, and is provided between the n-type cladding layer and the p-type cladding layer. A conduction band energy barrier difference, a difference between potential energy of a conduction band of the well layer and potential energy of a conduction band of the barrier layer, is smaller than an energy barrier difference of a valence band, a difference between potential energy of a valence band of the well layer and potential energy of a valence band of the barrier layer. In a second semiconductor light emitting element, the thickness of the barrier layer among the plurality of the barrier layers on the side of the p-type cladding layer is less than that of the barrier layer on the side of the n-type cladding layer. COPYRIGHT: (C)2007,JPO&INPIT
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