| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To write, with higher accuracy, data to a non-volatile storage element including a memory domain of 4 or more bits to a memory cell held between a source and a drain. <P>SOLUTION: The non-volatile storage memory 100 comprises a memory cell including n (n is even number equal to or larger than 4) control gates 114 to 117 allocated in parallel between the first and second impurity diffusing domains 160a and 160b, provided in separation from a silicon substrate 102 and memory domains 106a to 106d respectively forming pairs with these control gates. The control method of the non-volatile storage element 100 comprises the steps of dividing the n control gates 114 to 117 into the right and left gates, applying a low voltage to the impurity diffusing domain far from the memory domain as the electron injection object and a high voltage to the impurity diffusing domain near to the memory domain, and applying a voltage higher than that applied to the other control gate to the control gate forming a pair with the memory domain as the electron injection object. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
