发明名称 IC with on-die power-gating circuit
摘要 In some embodiments a semiconductor device is described that includes, on a single die, both a functional circuit and a power-gating circuit. The power-gating circuit may be used to control the power delivered to core circuit elements on the semiconductor device. The power may be provided to and possibly from the power-gating circuit using underutilized die connection elements. Other embodiments are otherwise disclosed herein.
申请公布号 US2007023878(A1) 申请公布日期 2007.02.01
申请号 US20050193276 申请日期 2005.07.29
申请人 INTEL CORPORATION 发明人 BURTON EDWARD
分类号 H01L23/495 主分类号 H01L23/495
代理机构 代理人
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