摘要 |
The present invention provides a semiconductor device and fabricating method thereof, by which capacitance is enhanced by increasing an effective area of a lower electrode of a capacitor. The present invention includes a first lower electrode on a semiconductor substrate to have a plate shape, a second lower electrode on the first electrode to have a <img id="CUSTOM-CHARACTER-00001" he="2.79mm" wi="1.44mm" file="US07170127-20070130-P00001.TIF" alt="custom character" img-content="character" img-format="tif"/><img id="CUSTOM-CHARACTER-00002" he="2.79mm" wi="1.44mm" file="US07170127-20070130-P00002.TIF" alt="custom character" img-content="character" img-format="tif"/> type (or "wing"-type) cross-section, a dielectric layer covering surfaces of the first and second lower electrodes, and an upper electrode on the dielectric layer.
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