发明名称 ENHANCED SPUTTER TARGET MANUFACTURING METHOD
摘要 A manufacturing method that produces sound billet stocks for manufacturing defect free, chemically homogeneous sputter targets having improved PTF, and a manufacturing method including a powder metallurgy alloy formulation, rapid solidification processing alternatives and powder consolidation and post-consolidation processing steps for the production of sputter targets having improved properties are provided. A method for manufacturing a cobalt(Co)-based sputter target formulated by comprising Co-(5-40 at.%)Fe-(5-20 at.%)B, or Co-(5-25 at.%)Cr-(5-25 at.%)Pt-(5-20 at.%)B-(0.2-7.5 at.%)X1 and optionally (0.5-7.5 at.%)X2, wherein X1 represents copper(Cu), silver(Ag), or gold(Au), and X2 represents titanium(Ti), vanadium(V), yttrium(Y), zirconium(Zr), niobium(Nb), molybdenum(Mo), ruthenium(Ru), rhodium(Rh), lanthanum(La), hafnium(Hf), tantalum(Ta), tungsten(W), or iridium(Ir), the method comprises: a step(S402) of preparing a plurality of raw materials for a composition corresponding to an ally system comprising Co-(5-40 at.%)Fe-(5-20 at.%)B, or Co-(5-25 at.%)Cr-(5-25 at.%)Pt-(5-20 at.%)B-(0.2-7.5 at.%)X1 and optionally (0.5-7.5 at.%)X2, wherein the plurality of raw materials comprise pure elements or master alloys; a step(S404) of heating the plurality of raw materials to a fully liquid state under vacuum or a partial pressure of argon(Ar) to form a molten alloy corresponding to the ally system comprising Co-(5-40 at.%)Fe-(5-20 at.%)B, or Co-(5-25 at.%)Cr-(5-25 at.%)Pt-(5-20 at.%)B-(0.2-7.5 at.%)X1 and optionally (0.5-7.5 at.%)X2; a step(S405) of solidifying the molten alloy to form an ingot; a step(S406) of reheating the ingot to a fully liquid state to form a diffused molten alloy; a step(S407) of rapidly solidifying the diffused molten alloy into a homogeneous pre-alloyed powder material; a step(S408) of consolidating the homogeneous pre-alloyed powder material into a high density homogeneous material; a step(S410) of cold rolling the high density homogeneous material; and a step(S411) of precision-machining the high density homogeneous material to form a sputter target.
申请公布号 KR20070012193(A) 申请公布日期 2007.01.25
申请号 KR20060045561 申请日期 2006.05.22
申请人 HERAEUS, INC. 发明人 ZIANI ABDELOUAHAB;KUNKEL BERND
分类号 C22C19/07;C22C1/04;C23C14/34 主分类号 C22C19/07
代理机构 代理人
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