发明名称 |
Apparatus and method for treating edge of substrate |
摘要 |
An apparatus for treating an edge of a semiconductor substrate includes an etchant supply nozzle for supplying a first etchant to the edge of the semiconductor substrate. The apparatus further includes a shielding cover for preventing an etchant from flowing to a shielding surface of the semiconductor substrate. The shielding cover is movable in an upward and downward direction. The apparatus also includes a device for cleaning the edge of the semiconductor substrate. According to the apparatus, after a wafer edge is etched, foreign substances remaining at the wafer edge is efficiently removed.
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申请公布号 |
US7166183(B2) |
申请公布日期 |
2007.01.23 |
申请号 |
US20040884533 |
申请日期 |
2004.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM CHANG-HYEON;LEE SEUNG-KIM;LEE MAN-YOUNG;KIM YOON-KYUNG;CHAE HAN-YONG;AHN DUK-MIN |
分类号 |
H01L21/00;H01L21/304;B08B7/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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