发明名称 Apparatus and method for treating edge of substrate
摘要 An apparatus for treating an edge of a semiconductor substrate includes an etchant supply nozzle for supplying a first etchant to the edge of the semiconductor substrate. The apparatus further includes a shielding cover for preventing an etchant from flowing to a shielding surface of the semiconductor substrate. The shielding cover is movable in an upward and downward direction. The apparatus also includes a device for cleaning the edge of the semiconductor substrate. According to the apparatus, after a wafer edge is etched, foreign substances remaining at the wafer edge is efficiently removed.
申请公布号 US7166183(B2) 申请公布日期 2007.01.23
申请号 US20040884533 申请日期 2004.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NAM CHANG-HYEON;LEE SEUNG-KIM;LEE MAN-YOUNG;KIM YOON-KYUNG;CHAE HAN-YONG;AHN DUK-MIN
分类号 H01L21/00;H01L21/304;B08B7/00 主分类号 H01L21/00
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