| 摘要 |
A semiconductor device and a forming method thereof are provided to increase the length of a channel region by forming a bar type protrusion on a bottom portion alone of a recess gate region. An active region(120) is formed on a semiconductor substrate(100). A recess gate region(160) is formed on a predetermined portion. A gate(170) and the active region are overlapped with each other at the predetermined portion. A bar type protrusion(150) is formed at a bottom of the recess gate region. The protrusion is parallel with a length portion of the gate. The protrusion is capable of being vertical to the length portion of the gate.
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