LITHOGRAPHY SIMULATION METHOD, MASK PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND RECORDING MEDIUM

摘要

A lithography simulating method, a mask pattern preparing method, a method for fabricating a semiconductor device, and a recording medium are provided to accurately predict a dimensional fluctuation resulted from diffusion of acid of a chemically amplitude resist through the computer simulation. Design data of a pattern to be formed on a substrate and mask data to prepare a mask pattern used in forming a latent image of the pattern on the substrate by transmission of energy rays are stored(S1). The latent image of the pattern is obtained by calculation of an intensity of the energy rays(S2). A relative position between a latent image curve and a reference intensity line is locally changed according to a distance between the pattern to be interested and a pattern of a neighboring region(S3). A distance between intersections of a portion of the latent image and the reference intensity line in the changed relative position is calculated to define an interested line width of the pattern(S5,S6).