METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to fabricate a semiconductor device having a long channel as compared with the CD(critical dimension) of a gate electrode by forming a channel under the surface of a substrate having a recess part. A mask pattern having a first pitch is formed on a substrate(100). By using the mask pattern as an etch mask, the substrate is partially etched to form a recess part. A gate oxide layer is continuously formed on the substrate and the recess part. A gate conductive layer is formed on the gate oxide layer to fill the recess part. A part of the gate conductive layer is etched to form a gate electrode(120) having a second pitch which is a half of the first pitch. A first sidewall of the gate electrode is positioned on the substrate, and a second sidewall of the gate electrode confronting the first sidewall is positioned on the bottom surface of the recess part. The inner width of the recess part is 1.2~2.8 times as much as the CD of the gate electrode.