发明名称 |
Semiconductor element has body with pn junction edge connections and doped semiconductor islands in field isolation |
摘要 |
<p>Semiconductor element comprises a body (100) with a pn junction (PN1) and contacts (K1,K2) on opposite sides (S1,S2). There is an edge connection (RA) from an edge region (B1) of a first side to the pn junction and a remaining second region (B2) on this side. There is a field isolation (120) of first conductivity type semiconductor and semiconductor islands (120) of second conductivity type semiconductor that are arranged only beneath the second (B2) region.</p> |
申请公布号 |
DE102005029263(A1) |
申请公布日期 |
2007.01.11 |
申请号 |
DE20051029263 |
申请日期 |
2005.06.23 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
MAUDER, ANTON;SCHULZE, HANS-JOACHIM;PFIRSCH, FRANK |
分类号 |
H01L29/06;H01L29/739;H01L29/861 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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