发明名称 Semiconductor element has body with pn junction edge connections and doped semiconductor islands in field isolation
摘要 <p>Semiconductor element comprises a body (100) with a pn junction (PN1) and contacts (K1,K2) on opposite sides (S1,S2). There is an edge connection (RA) from an edge region (B1) of a first side to the pn junction and a remaining second region (B2) on this side. There is a field isolation (120) of first conductivity type semiconductor and semiconductor islands (120) of second conductivity type semiconductor that are arranged only beneath the second (B2) region.</p>
申请公布号 DE102005029263(A1) 申请公布日期 2007.01.11
申请号 DE20051029263 申请日期 2005.06.23
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 MAUDER, ANTON;SCHULZE, HANS-JOACHIM;PFIRSCH, FRANK
分类号 H01L29/06;H01L29/739;H01L29/861 主分类号 H01L29/06
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