发明名称 Method for separating sapphire wafer into chips using dry-etching
摘要 A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.
申请公布号 US7151045(B2) 申请公布日期 2006.12.19
申请号 US20040810634 申请日期 2004.03.29
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM JU HYUN;OH BANG WON
分类号 H01L21/46;B28D5/00;H01L21/301;H01L21/3065;H01L21/78;H01L33/32 主分类号 H01L21/46
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