发明名称 |
Method for separating sapphire wafer into chips using dry-etching |
摘要 |
A method for singulating a sapphire wafer, provided with semiconductor elements formed thereon, into unit chips includes (a) grinding a rear surface of the sapphire wafer so that the sapphire wafer has a designated thickness; (b) lapping the rear surface of the ground sapphire wafer so that the sapphire wafer has a designated thickness; (c) dry-etching the rear surface of the lapped sapphire wafer so that the sapphire wafer has a uniform thickness; and (d) scribing the rear surface of the dry-etched sapphire wafer.
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申请公布号 |
US7151045(B2) |
申请公布日期 |
2006.12.19 |
申请号 |
US20040810634 |
申请日期 |
2004.03.29 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM JU HYUN;OH BANG WON |
分类号 |
H01L21/46;B28D5/00;H01L21/301;H01L21/3065;H01L21/78;H01L33/32 |
主分类号 |
H01L21/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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