SALICIDE PROCESS AND THE METHOD OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A salicide(self-aligned silicide) processing and a method for manufacturing a semiconductor device using the same are provided to remove defects in a metal silicide layer by using two-step annealing processes. A substrate having a silicon region is prepared. A metal film is formed on the substrate. A metal silicide layer is then formed by first annealing the metal film and by second annealing the metal film using in-situ method. At this time, the temperature of the first annealing process is 300~600‹C and the temperature of the second annealing process is 200~300‹C.