COMPOUND FOR RESIST AND RESIST COMPOSITION

摘要

Resist compound (A) (a) produced by reacting a reagent for introduction of a crosslinking reaction group capable of directly or indirectly inducing a crosslinking reaction upon exposure to any radiation selected from the group consisting of visible light, ultraviolet light, excimer laser, extreme ultraviolet (EUV), electron beam, X-ray and ion beam with a polyphenol compound produced by condensation reaction between a C<SUB>5</SUB>-C<SUB>45</SUB> aromatic ketone or aromatic aldehyde and a C<SUB>6</SUB>-C<SUB>15</SUB> compound having 1 to 3 phenolic hydroxyls, and (b) having a molecular weight of 300 to 5000, wherein (c) at least one crosslinking reaction group mentioned above is present in each molecule thereof. There is provided a resist composition comprising at least one type of resist compound (A), and provided compounds usable therein. This resist composition has high sensitivity, thereby enabling preparation of a resist pattern of high resolution and enabling manufacturing of a semiconductor device of high integration degree with high productivity.