发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>A semiconductor device is provided with a first conductivity type semiconductor substrate (10); a voltage supplying terminal (26) arranged on the semiconductors substrate (10); one or more elements (6) which include a second conductivity type well section (22) and are arranged on the semiconductor substrate (10); a second conductivity type first conductive layer (21), which is a lower layer of the one or more elements (6), is in contact with the second conductivity type well section (22), and connects the second conductivity type well section (22) of the one or more elements (6) with the voltage supplying terminal (26); and a first conductivity type second conductive layer (11) formed in contact with a lower layer of the first conductive layer (21).</p>
申请公布号 WO2006131986(A1) 申请公布日期 2006.12.14
申请号 WO2005JP10709 申请日期 2005.06.10
申请人 SATOH, SHIGEO;FUJITSU LIMITED 发明人 SATOH, SHIGEO
分类号 H01L27/04;H01L27/088;H01L27/092;H01L21/822;H01L27/08;H01L21/8234;H01L21/8238 主分类号 H01L27/04
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