| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a trenched semiconductor device which can suppress avalanche breakdown and can be manufactured by easily controlling the impurity concentration and the diffusion depth without causing a complicated process and a cost increase. <P>SOLUTION: This trenched semiconductor device has a gate electrode 6 embedded in a trench. The trench comprises a first region 11c having a width equal to that of an opening 11b thereof, and a second region 11d having a width larger than that of the opening 11b and disposed under the first region 11c. The undersurface of a base layer 2 provided adjacently to the trench is disposed adjacently to the second region 11d. Further, the corner of the second region 11d is so rounded that the curvature radius thereof is≥0.1μm. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
