发明名称 |
COMPOSITION FOR FORMING INTERMEDIATE LAYER CONTAINING SILYLPHENYLENE-BASED POLYMER AND PATTERN-FORMING METHOD |
摘要 |
Provided is a composition for forming an intermediate layer disposed between a layer to be processed and a resist layer, which has improved etching resistance and anti-reflective property to light with a short wavelength. The composition for forming an intermediate layer comprises: (A) an aromatic ring-containing silylphenylene-based polymer having repeating units represented by the following formula 1; and (C) a solvent. In the formula 1, at least one of R1 and R2 is a crosslinkable group; each of m and n is an integer of 0-20; and l is a number of the repeating units. The silylphenylene-based polymer has a weight average molecular weight of 100-10000.
|
申请公布号 |
KR20060120429(A) |
申请公布日期 |
2006.11.27 |
申请号 |
KR20060043809 |
申请日期 |
2006.05.16 |
申请人 |
TOKYO OHKA KOGYO CO., LTD. |
发明人 |
YAMASHITA NAOKI;HARADA HISANOBU;FUJII YASUSHI;SAKAMOTO YOSHINORI |
分类号 |
C08L83/04;B05D7/24;C08G61/12;C08G77/60;C08K5/10;C08L83/00;C08L83/16;C09D183/16;G03F7/11;H01L21/027 |
主分类号 |
C08L83/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|