| 摘要 |
A photodiode array includes a first photodiode and at least a second photodiode. The first photodiode includes a first active area, a first anti-reflective coating area, and a first residual polysilicon ring. The first anti-reflective coating area and the first residual polysilicon ring are formed asymmetrically over the first active area. The second photodiode includes a second active area, a second anti-reflective coating area, and a second residual polysilicon ring. The second anti-reflective coating area and the second residual polysilicon ring are formed asymmetrically over the second active area. The first anti-reflective coating area is formed over a region of the first active region adjacent to the second photodiode, and the second anti-reflective coating area is formed over a region of the second active region adjacent to the first photodiode.
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