CMOS IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide an image sensor that reduces a dark current and its manufacturing method. SOLUTION: The CMOS (complementary metal-oxide semiconductor) image sensor comprises an active unit pixel including an indium-doping layer located at a lower part of a transmission gate that transmits electric charge between a light receiving element and a floating diffusion area. COPYRIGHT: (C)2007,JPO&INPIT