RESIST PATTERN FORMING METHOD, ETCHING METHOD, AND METHOD FOR MANUFACTURING MASTER INFORMATION CARRIER

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern capable of dimensionally precisely and simply forming a pattern on the surface of the base substance, to provide an etching method, and to provide a method for forming a master information carrier. SOLUTION: The method for manufacturing the resist pattern comprises the steps of forming a first resist film 2 all over the surface of the base material 1, forming a second resist film 3 having an opening 3a on the first resist film 2, implanting an ion to the surface of the first resist film 2 in the opening 3a by the ion implantation method, and etching the first resist film 2 with the ion implantation layer 5 as a mask. In addition, the use of the resist pattern 7 can precisely etch the base material 1 or the thin film previously formed on the base material 1. The use of the method can also manufacture the master information carrier. COPYRIGHT: (C)2007,JPO&INPIT