| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a bright nitride light-emitting element which has a light-transmitting conductive oxide layer that is incorporated into the element to maximize a reflection effect of a reflective ohmic contact layer structure, thus offering high brightness in light emission. <P>SOLUTION: The flip-chip nitride semiconductor light-emitting element 20 comprises n-type/p-type nitride semiconductor layers 24, 26, and an active layer 25 formed between the semiconductor layers 24, 26. The light-emitting element 20 also includes an ohmic contact layer 27a formed on the p-type nitride semiconductor layers 26, a light-transmitting conductive oxide layer 27b formed on the ohmic contact layer 27a, and a high-reflective metal layer 27c formed on the light-transmitting conductive oxide layer 27b. <P>COPYRIGHT: (C)2007,JPO&INPIT |
