| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistive memory element capable reducing driving voltage while enhancing density, and also capable of storing at least 2-bit data. <P>SOLUTION: The resistive memory element comprises a substrate, a transistor formed on the substrate, and a storage node coupled to the transistor, wherein the storage node comprises a lower electrode coupled to the substrate, a first phase change memory laminated on the lower electrode, a first barrier layer formed on the first phase change layer, a second change layer formed on the first barrier layer, and an upper electrode formed on the second phase change layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
