发明名称 GLASS-BASED SEMICONDUCTOR ON INSULATOR STRUCTURES AND METHODS OF MAKING SAME
摘要 <p>Methods and apparatus provide for: a semiconductor wafer; at least one porous layer in the semiconductor wafer; an epitaxial semiconductor layer directly or indirectly on the porous layer; and a glass substrate bonded to the epitaxial semiconductor layer via electrolysis.</p>
申请公布号 WO2006112995(A2) 申请公布日期 2006.10.26
申请号 WO2006US09410 申请日期 2006.03.15
申请人 CORNING INCORPORATED;GADKAREE, KISHOR, P. 发明人 GADKAREE, KISHOR, P.
分类号 H01L21/20;H01L21/36 主分类号 H01L21/20
代理机构 代理人
主权项
地址