SEMICONDUCTOR LIGHT-EMITTING DEVICE

摘要

Disclosed is a semiconductor light-emitting device comprising an active layer composed of a gallium nitride compound semiconductor, a first semiconductor layer arranged closer to the p layer than the active layer and composed of In<SUB>x1</SUB>Al<SUB>y1</SUB>Ga<SUB>1-x1-y1</SUB>N (wherein 0 = x1 = 1 and 0 = y1 = 1) which is under tensile strain, a second semiconductor layer composed of In<SUB>x2</SUB>Al<SUB>y2</SUB>Ga<SUB>1-x2-y2</SUB>N (wherein 0 = x2 = 1 and 0 = y2 = 1) having a band gap smaller than that of the first semiconductor layer, and a third semiconductor layer arranged between the first semiconductor layer and the second semiconductor layer and composed of In<SUB>x3</SUB>Al<SUB>y3</SUB>Ga<SUB>1-x3-y3</SUB>N (wherein 0 = x3 = 1 and 0 = y3 = 1) having a band gap smaller than that of the first semiconductor layer and larger than that of the second semiconductor layer.