NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A nitride semiconductor LED is provided to remarkably improve light extraction efficiency by high reflection effect by introducing a light-penetrating conductive oxide layer and a dielectric reflection layer into a p-side contact structure wherein a plurality of contact holes are arrange din the dielectric reflection layer. A nitride semiconductor light emitting structure includes p-type and n-type nitride semiconductor layers(35,33) and an active layer(34) formed between the p-type and the n-type nitride semiconductor layers. An ohmic contact layer(36a) is formed on the p-type nitride semiconductor layer. A light-penetrating conductive oxide layer(36b) is formed on the ohmic contact layer. Two kinds of dielectric layers having different indexes of refraction are alternately and repeatedly formed on the light-penetrating conductive oxide layer. A dielectric reflection layer(37) has a plurality of contact holes to partially expose the light-penetrating conductive oxide layer. A bonding metal(39) is formed on the dielectric reflection layer, bonded to the light-penetrating conductive oxide layer through the plurality of contact holes. The ohmic contact layer is made of In2O3 including at least one kind selected from a group composed of Cu, Zn and Mg.