| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor wafer provided with a plurality of semiconductor devices that can improve the yield and quality of a product, and to provide its dicing method. <P>SOLUTION: The wafer 20a is composed so that an SOI layer other than a silicon substrate 21 with a reformed area formed thereto and located on the entering side of a laser beam L to the silicon substrate 21 is removed from among the silicon substrate 21, an oxide film, and the SOI layer to a slicing line DL where emission of the laser beam L is scheduled before the laser beam L to be emitted for forming the reformed area is emitted (a layer removing process). By this, the laser beam L entering the slicing line DL enters the silicon substrate 21 without causing reflection and dispersion by the SOI layer, and proper slicing by the reformed area can be achieved. Consequently, the yield and quality of chips Dev can be improved. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
