发明名称 |
Structure/method to fabricate a high performance magnetic tunneling junction MRAM |
摘要 |
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has a smooth surface as a result of the sputter-etching and that smooth surface promotes the subsequent formation of a lower electrode (pinning/pinned layer) with smooth, flat layers and a radical oxidized (ROX) Al tunneling barrier layer which is ultra-thin, smooth, and to has a high breakdown voltage. A seed layer of NiCr is formed on the sputter-etched layer of Ta. The resulting device has generally improved performance characteristics in terms of its switching characteristics, GMR ratio and junction resistance.
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申请公布号 |
US7122852(B2) |
申请公布日期 |
2006.10.17 |
申请号 |
US20040844171 |
申请日期 |
2004.05.12 |
申请人 |
APPLIED SPINTRONICS, INC. |
发明人 |
HORNG CHENG T.;CHEN MAO-MIN;HONG LIUBO;TONG RU-YING |
分类号 |
H01L31/113;G11C11/00;H01L21/00;H01L29/76;H01L43/08;H01L43/12 |
主分类号 |
H01L31/113 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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